520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：634.92 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

520 V N 沟道 MOSFET

这些N沟道增强型功率场效应晶体管是采用飞兆专有的、平面条形DMOS技术生产的。 这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。 这些器件非常适合高效的开关模式电源、功率因数校正和半桥电子灯整流器。 •1.3 A、520 V、RDS(on) = 5.3 Ω，需 VGS = 10 V\n•低栅极电荷（典型值 8.3 nC)\n•低 Crss（典型值 5.5 pF)\n•快速开关\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能;

ONSEMI

安森美半导体

MOSFET NCh/500V/1.3a/5.5Ohm

ONSEMI

安森美半导体

N-Channel 650 V (D-S) MOSFET

文件：1.1032 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：600.21 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel 650 V (D-S) MOSFET

文件：1.10311 Mbytes 页数：9 Pages

VBSEMI

微碧半导体