600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：637.87 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：346.34 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S)Power MOSFET

文件：1.90687 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：642.56 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel 650 V (D-S) MOSFET

文件：1.09029 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件：411.7 Kbytes 页数：12 Pages

SILAN

士兰微