MOSFET N-CH 600V 0.9A IPAK

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 600V Low RDS(ON) : 9.390Ω (Typ.)

文件：628.95 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel 650 V (D-S) MOSFET

文件：1.10302 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：607.89 Kbytes 页数：9 Pages

Fairchild

仙童半导体