N-CHANNEL POWER MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 500V ■ Lower RDS(ON) : 4.046 Ω(Typ.)

文件：265.7 Kbytes 页数：7 Pages

Fairchild

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isc N-Channel MOSFET Transistor

文件：345.35 Kbytes 页数：2 Pages

ISC

无锡固电

520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：634.92 Kbytes 页数：9 Pages

Fairchild

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N-Channel 650 V (D-S) MOSFET

文件：1.1032 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：600.21 Kbytes 页数：9 Pages

Fairchild

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