SST39VF3201数据手册集成电路（IC）的存储器规格书PDF

描述 Description

*Not Recommended For New Design*The SST39VF3201 device is organized in 2M x16, The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

特性 Features

•Organized as 2M x16: SST39VF3201/3202
•Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
•Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF3202– Bottom Block-Protection (bottom 32 KWord)for SST39VF3201
•Sector-Erase Capability– Uniform 2 KWord sectors
•Block-Erase Capability– Uniform 32 KWord blocks
•Chip-Erase Capability
•Erase-Suspend/Erase-Resume Capabilities
•Hardware Reset Pin (RST#)
•Security-ID Feature– SST: 128 bits; User: 128 bits
•Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
•Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)
•All non-Pb (lead-free) devices are RoHS compliant

简介

SST39VF3201属于集成电路（IC）的存储器。由制造生产的SST39VF3201存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。