SST39VF200A数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The SST39VF200A is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF200A writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

特性 Features

Organized as 128K x16
Low Power Consumption: Active Current: 9 mA (typical) Standby Current: 3 µA (typical)
Sector-Erase Capability:Uniform 2 KWord sectors
Block-Erase Capability:Uniform 32 KWord blocks
Fast Erase and Word-Program: Sector-Erase Time:18 ms (typical), Block-Erase Time:18 ms (typical), Chip-Erase Time:70 ms (typical, Word-Program Time:14 µs (typical)
Packages Available:48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm), 48-ball WFBGA (4mm x 6mm)
All non-Pb (lead-free) devices are RoHS compliant

简介

SST39VF200A属于集成电路（IC）的存储器。由制造生产的SST39VF200A存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。