SST39LF800A数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The SST39LF800A is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF800A writes (Program or Erase) with a 3.0-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

特性 Features

Organized as 512K x16
Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF800A
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption(typical values at 14 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Fast Read Access Time– 55 ns for SST39LF800A
Latched Address and Data
Fast Erase and Word-Program– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Word-Program Time: 14 µs (typical)– Chip Rewrite Time:8 seconds (typical) for SST39LF800A
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit
All non-Pb (lead-free) devices are RoHS compliant

简介

SST39LF800A属于集成电路（IC）的存储器。由制造生产的SST39LF800A存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。