SST39LF801C数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The SST39LF801C device is 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF801C writes (Program or Erase) with a 3.0-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

特性 Features

Organized as 512K x16
Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord)
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one16-, and fifteen 32-KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Latched Address and Data
Security-ID Feature– SST: 128 bits; User: 128 words
Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bits– Data# Polling– Ready/Busy# Pin
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)- 48-ball WFBGA (4mm x 6mm)

简介

SST39LF801C属于集成电路（IC）的存储器。由制造生产的SST39LF801C存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。