SST39SF010A数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.

特性 Features

Organized as 128K x8 / 256K x8 / 512K x8
Single 4.5-5.5V Read and Write Operations
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical)
Sector-Erase Capability– Uniform 4 KByte sectors
Fast Read Access Time:– 55 ns– 70 ns
Latched Address and Data
Automatic Write Timing– Internal VPP Generation
Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040
End-of-Write Detection– Toggle Bit– Data# Polling
TTL I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP
All devices are RoHS compliant
All non-Pb (lead-free) devices are RoHS compliant

简介

SST39SF010A属于集成电路（IC）的存储器。由制造生产的SST39SF010A存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。