200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：914.41 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：914.41 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25µA (Max.) @ VDS= 600V Lower RDS(ON) : 2.037 (Typ.)

文件：256.63 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：890.05 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel Enhancement Mode MOSFET

文件：581.05 Kbytes 页数：4 Pages

SECOS

喜可士

N-Channel Enhancement Mode MOSFET

文件：581.05 Kbytes 页数：4 Pages

SECOS

喜可士

isc N-Channel MOSFET Transistor

文件：279.19 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：279.42 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：279.65 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：280.34 Kbytes 页数：2 Pages

ISC

无锡固电