Field-Effect Transistor Silicon N-Channel MOS Type

○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5V drive • N-ch 2-in-1 • Low ON-resistance : RDS(ON) = 600 mΩ (max) (@VGS = 1.5V) : RDS(ON) = 450 mΩ (max) (@VGS = 1.8V) : RDS(ON) = 330 mΩ (max)

文件：194.39 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Small-signal MOSFET 2 in 1

Polarity：N-ch×2\nGeneration：π-MOSⅥ\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current (Q1) ID 0.8 A \nDrain-Source voltage (Q1) VDSS 20 V \nGate-Source voltage (Q1) VGSS ±10 V \nDrain current (Q2) ID 0.8 A \nDrain-Source voltage (Q2) VDSS 20 V \nGate-Source voltage (Q2) VGSS ±10 V ;

Toshiba

东芝

SUPER超致
TO-220

SUPER超致

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DDC
SOP

DDC

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