SSM6N42FE

Field-Effect Transistor Silicon N-Channel MOS Type

○PowerManagementSwitchApplications ○High-SpeedSwitchingApplications •1.5Vdrive •N-ch2-in-1 •LowON-resistance:RDS(ON)=600mΩ(max)(@VGS=1.5V) :RDS(ON)=450mΩ(max)(@VGS=1.8V) :RDS(ON)=330mΩ(max)

SSM6N42FE

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM6N42FE

Small-signal MOSFET 2 in 1; Drain current (Q1) ID 0.8 A \nDrain-Source voltage (Q1) VDSS 20 V \nGate-Source voltage (Q1) VGSS ±10 V \nDrain current (Q2) ID 0.8 A \nDrain-Source voltage (Q2) VDSS 20 V \nGate-Source voltage (Q2) VGSS ±10 V \n;

Polarity：N-ch×2\nGeneration：π-MOSⅥ\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\n