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6N25

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6N25

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N25TF

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N25TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N25TM

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDU6N25

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDU6N25TU

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB6N25

250VN-ChannelMOSFET

Features •5.5A,250V,RDS(on)=1.0Ω@VGS=10V •Lowgatecharge(typical6.6nC) •LowCrss(typical7.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD6N25TM

N-ChannelQFETMOSFET250V,4.4A,1.0

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI6N25

250VN-ChannelMOSFET

Features •5.5A,250V,RDS(on)=1.0Ω@VGS=10V •Lowgatecharge(typical6.6nC) •LowCrss(typical7.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP6N25

250Vn-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

KQB6N25

250VN-ChannelMOSFET

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KSMD6N25

250VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
2019+PB
UF6
11560
原装正品 可含税交易
询价
TOSHIBA/东芝
2015+
SOT-363
28781
全新原装正品现货
询价
TOSHIBA/东芝
23+
SOT-363
50000
全新原装正品现货,支持订货
询价
TOSHIBA/东芝
2022
SOT-363
80000
原装现货,OEM渠道,欢迎咨询
询价
TOSHIBA/东芝
22+
UF6
354000
询价
SSM6N25TU 超小型管
2019+PB
UF6
11560
询价
TOSHIBA/东芝
22+
11560
询价
TOSHIBA/东芝
新年份
UF6
11560
原装正品大量现货,要多可发货,实单带接受价来谈!
询价
TOSHIBA
2022
SOT363
2094
原厂原装正品,价格超越代理
询价
TOSHIBA
1742+
SOT363
98215
只要网上有绝对有货!只做原装正品!
询价
更多SSM6N25TU超小型管供应商 更新时间2024-6-21 14:00:00