Field-Effect Transistor Silicon N-Channel MOS Type

○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) : RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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丝印：KKH；Package：SOT-23F；MOSFETs Silicon N-Channel MOS

Applications • Power Management Switches • High-Speed Switching Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)

文件：392.83 Kbytes 页数：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：482.23 Kbytes 页数：9 Pages

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MOSFETs Silicon N-Channel MOS

Applications • Power Management Switches • High-Speed Switching Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)

文件：392.83 Kbytes 页数：9 Pages

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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

文件：237.86 Kbytes 页数：7 Pages

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Small Low ON resistance MOSFETs

Polarity：N-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 3.5 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-12 V ;

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