TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) Applications • Power Management Switches • DC-DC Converters

文件：265.1 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：KFD；Package：SOT-23F；MOSFETs Silicon N-Channel MOS

Applications • Power Management Switches • DC-DC Converters Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V)

文件：268.28 Kbytes 页数：9 Pages

TOSHIBA

东芝

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：493.31 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFETs Silicon N-Channel MOS

Applications • Power Management Switches • DC-DC Converters Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V)

文件：268.28 Kbytes 页数：9 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：U-MOSⅦ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 4 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-12 V ;

Toshiba

东芝