SSM3K324R

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=56mΩ(max)(@VGS=4.5V) RDS(ON)=72mΩ(max)(@VGS=2.5V) RDS(ON)=109mΩ(max)(@VGS=1.8V) Applications •PowerManagementSwitches •DC-DCConverters

SSM3K324R

Marking：KFD；Package：SOT-23F；MOSFETs Silicon N-Channel MOS

Applications •PowerManagementSwitches •DC-DCConverters Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=56mΩ(max)(@VGS=4.5V) RDS(ON)=72mΩ(max)(@VGS=2.5V) RDS(ON)=109mΩ(max)(@VGS=1.8V)

SSM3K324R

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

SSM3K324R_V01

MOSFETs Silicon N-Channel MOS

Applications •PowerManagementSwitches •DC-DCConverters Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=56mΩ(max)(@VGS=4.5V) RDS(ON)=72mΩ(max)(@VGS=2.5V) RDS(ON)=109mΩ(max)(@VGS=1.8V)