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SSM3K121TU

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

SSM3K122TU

Power Management Switch Applications

Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance: Ron = 304 mΩ (max) (@VGS = 1.5 V) Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max)

文件:140.67 Kbytes 页数:6 Pages

TOSHIBA

东芝

SSM3K122TU

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

SSM3K122TU

丝印:KKC;Package:2-2U1A;TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V) Ron = 123 mΩ (max) (@VGS = 4.0 V)

文件:335.06 Kbytes 页数:7 Pages

TOSHIBA

东芝

SSM3K122TU_V01

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V) Ron = 123 mΩ (max) (@VGS = 4.0 V)

文件:335.06 Kbytes 页数:7 Pages

TOSHIBA

东芝

SSM3K123TU

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

SSM3K123TU

Power Management Switch Applications

Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V)

文件:161.32 Kbytes 页数:6 Pages

TOSHIBA

东芝

SSM3K124TU

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

SSM3K127TU

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8V drive • Low ON-resistance: Ron = 286 mΩ (max) (@VGS = 1.8V) : Ron = 167 mΩ (max) (@VGS = 2.5V) : Ron = 123 mΩ (max) (@VGS = 4.0V)

文件:215.01 Kbytes 页数:7 Pages

TOSHIBA

东芝

SSM3K127TU

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

详细参数

  • 型号:

    SSM3K

  • 制造商:

    TOSHIBA

  • 制造商全称:

    Toshiba Semiconductor

  • 功能描述:

    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(U-MOSII)

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
25+
SOT-23
46827
TOSHIBA/东芝全新特价SSM3K14T即刻询购立享优惠#长期有货
询价
TOSHIBA
24+
SOT-23
39000
原装现货假一罚十
询价
TOSHIBA/东芝
2019+
SOT-23
36000
原盒原包装 可BOM配套
询价
TOSHIBA/东芝
20+
SOT-23
120000
原装正品 可含税交易
询价
TOSHIBA
23+
SOT23-3
60000
原装正品,假一罚十
询价
TOS
17+
SOT-23
6200
100%原装正品现货
询价
TOSHIBA
25+
SOT23
2027
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TOSHIBA
24+
SOT-23
15204
新进库存/原装
询价
TOSHIBA
23+
SOT23
8650
受权代理!全新原装现货特价热卖!
询价
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
更多SSM3K供应商 更新时间2025-11-5 19:09:00