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F7N60

7A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

FCD7N60

600VN-ChannelMOSFET

Description SuperFETis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.Rds(on)=0.53Ω •Ultralowga

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD7N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCD7N60TF

600VN-ChannelMOSFET

Description SuperFETis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.Rds(on)=0.53Ω •Ultralowga

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD7N60TM

600VN-ChannelMOSFET

Description SuperFETis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.Rds(on)=0.53Ω •Ultralowga

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD7N60TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD7N60TM-WS

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCI7N60

600VN-ChannelMOSFET

Description SuperFET®MOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,p

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCI7N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP7N60

N-ChannelSuperFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP7N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCP7N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP7N60

600VN-ChannelMOSFET

Description SuperFET®MOSFETisFairchildSemiconductor’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowonresistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,pr

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP7N60

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP7N60

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF7N60

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF7N60

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF7N60

600VN-ChannelMOSFET

Description SuperFET®MOSFETisFairchildSemiconductor’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowonresistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,pr

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF7N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF7N60

N-ChannelSuperFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    SSI7N60BTU

  • 功能描述:

    MOSFET 600V Single

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
23+
I2PAK(TO-262)
7793
支持大陆交货,美金交易。原装现货库存。
询价
FSC/ON
23+
原包装原封 □□
964
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
FSC
21+
TO-262
50000
全新原装正品现货,支持订货
询价
FSC
17+
TO-262
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
23+
N/A
38160
正品授权货源可靠
询价
D
CDIP
265209
假一罚十,原包原标签,常备现货
询价
D
23+
CDIP
50000
全新原装正品现货,支持订货
询价
D
21+
CDIP
10000
原装现货假一罚十
询价
D
2022
CDIP
80000
原装现货,OEM渠道,欢迎咨询
询价
SILICONSY
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
询价
更多SSI7N60BTU供应商 更新时间2024-5-15 16:34:00