SSW2N60B

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

SSW2N60B

N-Channel650V(D-S)MOSFET

STP2N60

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=3.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS

STP2N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP2N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=3.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS

STP2N60FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

SVD2N60T

2A,600VNChannelMOSFET

GENERALDESCRIPTION SVD2N60TisanN-channelenhancementmodepowerMOSfieldeffecttransistorwhichisproducedusingSilanproprietarySRin™structureDMOStechnology.Theimprovedplanarstripecellandtheimprovedguardingringterminalhavebeenespeciallytailoredtomini

SVF2N60D

N-ChannelMOSFETusesadvancedtrenchtechnology

SVF2N60D

N-Channel650V(D-S)MOSFET

SW2N60

ThispowerMOSFETisproducedinCHMCwithadvancedVDMOStechnologyofSAMWIN.