20V N-Channel MOSFET

DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON)

文件：447.43 Kbytes 页数：6 Pages

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P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：471.27 Kbytes 页数：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：493.97 Kbytes 页数：9 Pages

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Battery protection

DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON)

文件：309.18 Kbytes 页数：5 Pages

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30V N-Channel MOSFET

DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON)

文件：332.23 Kbytes 页数：4 Pages

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Battery protection

DESCRIPTION The SSF2306B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 29V,ID = 5A RDS(ON)

文件：309.9 Kbytes 页数：5 Pages

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PWM applications

DESCRIPTION The SSF2307 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -16V,ID = -4.7A RDS(ON)

文件：287.14 Kbytes 页数：5 Pages

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High Power and current handing capability

DESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON)

文件：324.44 Kbytes 页数：7 Pages

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P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：471.51 Kbytes 页数：9 Pages

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Battery protection

DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

文件：288.01 Kbytes 页数：1 Pages

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