20V N-Channel MOSFET

DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

文件：307.54 Kbytes 页数：4 Pages

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20V Dual N-Channel MOSFET

GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：321 Kbytes 页数：4 Pages

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Battery protection

GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：375.87 Kbytes 页数：5 Pages

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Battery protection

DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON)

文件：303.44 Kbytes 页数：5 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：491.35 Kbytes 页数：9 Pages

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微碧半导体

20V N-Channel MOSFET

DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON)

文件：323.65 Kbytes 页数：4 Pages

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Battery protection

DESCRIPTION The SSF2334 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

文件：271.18 Kbytes 页数：5 Pages

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20V N-Channel MOSFET

DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.2A RDS(ON)

文件：313.89 Kbytes 页数：4 Pages

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Battery protection

DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.2A RDS(ON)

文件：271.16 Kbytes 页数：5 Pages

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Advanced MOSFET process technology

Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the lat

文件：1.35361 Mbytes 页数：7 Pages

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