60 V, 2.0 A Schottky Rectifier

This Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. This Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling • Compact Package with J–Bend Leads Ideal for Automated Handling\n• Automotive Grade and PPAP Capable\n• Highly Stable Oxide Passivated Junction\n• Guardring for Over–Voltage Protection\n• Low Forward Voltage DropMechanical Characteristics:\n• Case: Molded Epoxy\n• Epoxy Meets UL94, VO at 1/8 inch\n;

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安森美半导体

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

. . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

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ONSEMI

安森美半导体