SRVBSS26NT3G规格书库存现货安森美半导体-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SRVBSS26NT3G	文件：192.64 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. 文件：192.64 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
NRVBSS26NT3G	文件：192.64 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. 文件：192.64 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI

更多SRVBSS26NT3G供应商更新时间2026-1-23 14:06:00