SRVBSS26NT3G中文资料安森美半导体数据手册PDF规格书

. . . employing the Schottky Barrier principle in a metal−to−silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes.

特性 Features

 Compact Package with J−Bend Leads Ideal for Automated Handling

 Highly Stable Oxide Passivated Junction

 Guardring for Overvoltage Protection

 Low Forward Voltage Drop

 NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

 These are Pb−Free Devices

Mechanical Characteristics:

 Case: Molded Epoxy

 Epoxy Meets UL 94, V−O at 0.125 in

 Weight: 95 mg (approximately)

 Cathode Polarity Band

 Lead and Mounting Surface Temperature for Soldering Purposes:

260C Max. for 10 Seconds

 Available in 12 mm Tape, 2500 Units per 13 Reel, Add “T3” Suffix

to Part Number

 Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

 ESD Ratings: Human Body Model = 3B

Machine Model = C

 Marking: SS26