SRVBSS26N数据手册ONSEMI中文资料规格书

描述 Description

This Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. This Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

特性 Features

• Compact Package with J–Bend Leads Ideal for Automated Handling
• Automotive Grade and PPAP Capable
• Highly Stable Oxide Passivated Junction
• Guardring for Over–Voltage Protection
• Low Forward Voltage DropMechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8 inch
• Weight: 95 mg (approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add \"T3\" Suffix to Part Number
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• ESD Ratings: Machine Model = CHuman Body Model = 3B
• Marking: SS26
• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

应用 Application

• Power Conversion Circuit
• Reverse Battery Protection
• Gate Driving Circuit
• Protection and Free-Wheeling
• General Converters
• Lighting
• Gasoline Direct Injection