30.0AMP Schottky Barrier Rectifiers

VOLTAGE 20V ~ 100V 30.0AMP Schottky Barrier Rectifiers FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

文件：207.56 Kbytes 页数：2 Pages

SECOS

喜可士

N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：85.57 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：83.36 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：83.36 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体