VD MOS

SALLTECH

萨瑞微电子

N-channel Enhanced mode SOT-23 MOSFET

文件：621.55 Kbytes 页数：5 Pages

SEMIPOWER

芯派科技

High Speed Switching Applications

○ High Speed Switching Applications • ESD protected gate • Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V)

文件：598.83 Kbytes 页数：7 Pages

TOSHIBA

东芝

High-Speed Switching

Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) Applications • High-Speed Switching

文件：241.67 Kbytes 页数：8 Pages

TOSHIBA

东芝