N-channel Enhanced mode SOT-23 MOSFET

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SEMIPOWER

芯派科技

低压MOSFET

Semipower

芯派科技

High Speed Switching Applications

○ High Speed Switching Applications • ESD protected gate • Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V)

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TOSHIBA

东芝

High-Speed Switching

Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) Applications • High-Speed Switching

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TOSHIBA

东芝

Small Signal N-Channel MOSFET

FEATURES AEC-Q101 Qualified Advanced trench cell design RoHS compliant Halogen-free APPLICATIONS Switching circuits High-speed line driver Low-side loadswitch Relay driver

文件：528 Kbytes 页数：7 Pages

TSC

台湾半导体