丝印：SQ2；Package：SMA；3.0A SBR® SURFACE MOUNT SUPER BARRIER RECTIFIER SMA

Features Ultra Low Forward Voltage Drop Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability 150°C Operating Junction Temperature Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Applications SMPS DC-DC converter F

文件：132.08 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description The SQ2301ES uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.89649 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The SQ2308CES uses advanced trench technolo gy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Thi s device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =3A RDS(ON)

文件：1.92812 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：9L；Package：SOT-23；Automotive N-Channel 60 V (D-S) 175 째C MOSFET

文件：166.36 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：35.09 Kbytes 页数：2 Pages

Polyfet

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：37.11 Kbytes 页数：2 Pages

Polyfet

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

文件：29.63 Kbytes 页数：1 Pages

Semicoa

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

文件：29.63 Kbytes 页数：1 Pages

Semicoa

Automotive P-Channel 20 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified d • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：221.84 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Automotive P-Channel 20 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified d • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：221.84 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技威世科技半导体