SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

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POLYFET

VDMOS SHORTFORM S1

Polyfet RF Devices

RF POWER VDMOS TRANSISTOR

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POLYFET

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

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MOSPEC

统懋

짹 15KV ESD PROTECTED 5V RS-232 TRANSCEIVER

DESCRIPTION The ST202E/ST232E are a 2 driver 2 receiver devices designed for RS-232 and V.28 communications in harsh enviroments. Each transmitter output and receiver input is protected against ± 15KV electrostatic discharge (ESD) shocks. The drivers meet all EIA/TIA-232E and CCITT V.28 specifica

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STMICROELECTRONICS

意法半导体

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switching for high efficiency. • In

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PANJIT

強茂