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NP60N04MUK

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

NP60N04MUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP60N04MUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP60N04NUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP60N04NUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP60N04PDK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.95mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP60N04PDK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.95mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP60N04VDK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP60N04VDK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.85mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedf

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP60N04VLK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
JG-SEMI
23+
PR-PAK
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
BOURNS
20+
SMD
315
原装
询价
ROCKWELL
24+
PLCC-68
4650
询价
SUNTAK
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
SUNTAK
2021+
60000
原装现货,欢迎询价
询价
SUNTAK
24+
NA/
1459
优势代理渠道,原装正品,可全系列订货开增值税票
询价
SUNTAK
24+
SOT-23-5
60000
全新原装现货
询价
KeystoneElectronics
5
全新原装 货期两周
询价
Keystone Electronics
2022+
1
全新原装 货期两周
询价
SECOS
2022+
DFN56
30000
进口原装现货供应,原装 假一罚十
询价
更多SPR60N04-C供应商 更新时间2025-5-19 16:58:00