首页 >SPP11N60C2功率三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CoolMOS??PowerTransistor Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET Features •LowVCE(sat). VCE(sat)=-0.55V(Typ.)(IC/IB=-4A/-0.1A) •ExcellentDCcurrentgaincharacteristics. Structure EpitaxialplanartypePNPsilicontransistor | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CoolMOS??PowerTransistor Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvednoiseimmunity | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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