Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge

文件：151.66 Kbytes 页数：12 Pages

Infineon

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丝印：11N60C3；Package：PG-TO220；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes 页数：16 Pages

Infineon

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Cool MOS??Power Transistor

文件：662.11 Kbytes 页数：15 Pages

Infineon

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Cool MOS??Power Transistor

文件：662.11 Kbytes 页数：15 Pages

Infineon

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Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes 页数：16 Pages

Infineon

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Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：680.24 Kbytes 页数：12 Pages

Infineon

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Cool MOS Power Transistor

文件：647.24 Kbytes 页数：12 Pages

Infineon

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Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：680.24 Kbytes 页数：12 Pages

Infineon

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Cool MOS Power Transistor

文件：647.24 Kbytes 页数：12 Pages

Infineon

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500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

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