SPP11N60C2

Marking：11N60C2；Package：P-TO220-3-1；Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

SPP11N60C2

N-Channel 650 V (D-S) MOSFET

Features •LowVCE(sat). VCE(sat)=-0.55V(Typ.)(IC/IB=-4A/-0.1A) •ExcellentDCcurrentgaincharacteristics. Structure EpitaxialplanartypePNPsilicontransistor

SPP11N60C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPP11N60C3

Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature

SPP11N60C3

N-Channel MOSFET Transistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform

SPP11N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)

SPP11N60CFD

N-Channel MOSFET Transistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.44Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

SPP11N60CFD

N-Channel 650 V (D-S) MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)

SPP11N60CFD

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge

SPP11N60C3

Marking：11N60C3；Package：PG-TO220；Cool MOS??Power Transistor Feature New revolutionary high voltage technology