丝印：SPB；Package：UDFN6B；MOSFETs Silicon P-Channel MOS

1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V)

文件：441.39 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.48 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：188.85 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.48 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.57 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.29 Kbytes 页数：2 Pages

ISC

无锡固电

10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY

FEATURES: • Designed for Space Use on Flexible Solar Pannels • Hermetically Sealed. • Wide Temperature Range: -100 to +150oC • Qualified Design to 20,000 Temperature Cycles • Flexible Leads - Welded or Soldered Termination • Large Radiation Surface for Operation without Heatsink

文件：49.07 Kbytes 页数：2 Pages

SSDI

Cool MOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Qualified according to JEDEC0) for target applications

文件：551.02 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：282.69 Kbytes 页数：12 Pages

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：2.03131 Mbytes 页数：9 Pages

VBSEMI

微碧半导体