丝印：SPS；Package：SOT23-3；Very Low Supply Current 3-Pin Microprocessor Reset Monitors

文件：105.88 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：SPSC20G065WL；Package：DO-247；650 V, 20 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：658.63 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：SPSC30G065WL；Package：DO-247；650 V, 30 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：659.24 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 0.8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 6.0Ω(Max)@VGS= 10V APPILICATIONS · SMPS · PFC · General Purpose High Voltage Switching

文件：306.89 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant; available in Halogen free and compound a) • Qualified accordin

文件：449.47 Kbytes 页数：10 Pages

INFINEON

英飞凌

Cool MOS??Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：526.14 Kbytes 页数：12 Pages

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.0Ω(Max)@VGS= 10V APPILICATIONS · SMPS · PFC · General Purpose High Voltage Switching

文件：307.15 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.2A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V APPILICATIONS · SMPS · PFC · General Purpose High Voltage Switching

文件：307.15 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：381.69 Kbytes 页数：12 Pages

INFINEON

英飞凌

Cool MOS??Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant; Halogen free mold compound a) • Qualif

文件：429.08 Kbytes 页数：12 Pages

INFINEON

英飞凌