Cool MOS??Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：526.14 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.19171 Mbytes 页数：12 Pages

Infineon

英飞凌

N-Channel 650V (D-S) Power MOSFET

文件：1.08523 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件：1.19171 Mbytes 页数：12 Pages

Infineon

英飞凌