丝印：SPB；Package：UDFN6B；MOSFETs Silicon P-Channel MOS

1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V)

文件：441.39 Kbytes 页数：9 Pages

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丝印：SP8；Package：UDFN6B；MOSFETs Silicon P-Channel MOS

文件：376.07 Kbytes 页数：9 Pages

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MOSFETs Silicon P-Channel MOS

1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V)

文件：441.39 Kbytes 页数：9 Pages

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Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID -10 A \nPower Dissipation PD 1.25 W \nDrain-Source voltage VDSS -12 V \nGate-Source voltage VGSS +/-10 V ;

Toshiba

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