SPA20N60C3(20N60C3)规格书库存现货-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
G20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N60C3D	文件：123.08 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N60C3D	文件：82.71 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
ISPP20N60C3	文件：339.04 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perfor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ISPW20N60C3	文件：335.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA20N60C3	文件：313.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA20N60C3	文件：1.83839 Mbytes Page：15 Pages	NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB20N60C3	文件：1.06347 Mbytes Page：13 Pages	CoolMOSPowerTransistorFeaturenewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	SPA20N60C3(20N60C3)	INFINEON	23+	TO-TO-220F	12300	全新原装真实库存含13点增值税票!	询价
深圳市河锋鑫科技有限公司	SPA20N60C3(20N60C3)	Infineon/英飞凌	22+	TO-220F	6000	十年配单,只做原装	询价
深圳市华芯源电子有限公司	SPA20N60C3(20N60C3)	INFINEON/英飞凌	22+	TO-220F	93836	终端免费提供样品可开13%增值税发票	询价
深圳和润天下电子科技有限公司	SPA20N60C3(20N60C3)	INFINEON/英飞凌	22+	TO-220F	93836		询价
深圳市创新迹电子有限公司	SPA20N60C3(20N60C3)	Infineon/英飞凌	22+	TO-220F	25000	只做原装进口现货,专注配单	询价
深圳市惊羽科技有限公司	SPA20N60C3(20N60C3)	INFINEON-英飞凌	24+25+/26+27+	TO-220-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市安富世纪电子有限公司	SPA20N60C3(20N60C3)	INFINEON	23+	TO-220F	8000	只做原装现货	询价
深圳市索歌特科技有限公司	SPA20N60C3(SP000216354)	INFINEON	23+		30000	绝对原装正品/真实库存/绝无虚假/支持送货	询价
贸泽芯城（深圳）电子科技有限公司	SPA20N60C3/SL21N60CF	SLKOR/萨科微		TO-220F	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市纳艾斯科技有限公司	SPA20N60C320N60C3	INFINEO	2020+	TO-220F	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价

更多SPA20N60C3(20N60C3)供应商更新时间2024-6-19 15:30:00

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