丝印：SP；Package：SO-8EP；AUTOMOTIVE-COMPLIANT, 40V, 3.5A SYNCHRONOUS BUCK WITH PROGRAMMABLE SOFT-START TIME

Features - AEC-Q100 Qualified with the Following Results - Device Temperature Grade 1: -40°C to +125°C TA Range - Device HBM ESD Classification Level H2 - Device CDM ESD Classification Level C5 - VIN: 3.8V to 40V - 3.5A Continuous Output Current - 0.8V ± 1 Reference Voltage - 22μA Low Quie

文件：1.24616 Mbytes 页数：26 Pages

DIODES

美台半导体

丝印：SP；Package：SO-8EP；3.8V TO 40V INPUT, 3.5A LOW IQ SYNCHRONOUS BUCK WITH PROGRAMMABLE SOFT-START TIME

Features - VIN 3.8V to 40V - 3.5A Continuous Output Current - 0.8V ± 1 Reference Voltage - 22μA Low Quiescent Current (Pulse Frequency Modulation) - 570kHz Switching Frequency - Programmable Soft-Start Time - Up to 85 Efficiency at 5mA Light Load - Proprietary Gate Driver Design for Best E

文件：1.26144 Mbytes 页数：26 Pages

DIODES

美台半导体

丝印：SP；Package：SO-8EP；AUTOMOTIVE-COMPLIANT, 40V, 3.5A SYNCHRONOUS BUCK WITH INTERNAL COMPENSATION

Features - AEC-Q100 Qualified with the Following Results - Device Temperature Grade 1: -40°C to +125°C TA Range - Device HBM ESD Classification Level H2 - Device CDM ESD Classification Level C5 - VIN: 3.8V to 40V - 3.5A Continuous Output Current - 0.8V ± 1 Reference Voltage - 22μA Low Quie

文件：1.10641 Mbytes 页数：21 Pages

DIODES

美台半导体

丝印：SP；Package：SO-8EP；3.8V TO 40V INPUT, 3.5A LOW IQ SYNCHRONOUS BUCK WITH INTERNAL COMPENSATION

Features - VIN 3.8V to 40V - 3.5A Continuous Output Current - 0.8V ± 1 Reference Voltage - 22μA Low Quiescent Current (Pulse Frequency Modulation) - Programmable Switching Frequency: 100kHz to 2.2MHz - External Clock Synchronization: 100kHz to 2.2MHz - Programmable Soft-Start Time - Up to

文件：1.17991 Mbytes 页数：21 Pages

DIODES

美台半导体

丝印：SP；Package：SO-8EP；AUTOMOTIVE-COMPLIANT, 40V, 5A SYNCHRONOUS BUCK WITH PROGRAMMABLE FREQUENCY

Features - AEC-Q100 Qualified with the Following Results - Device Temperature Grade 1: -40°C to +125°C TA Range - Device HBM ESD Classification Level H2 - Device CDM ESD Classification Level C5 - VIN: 3.8V to 40V - 5A Continuous Output Current - 0.8V ± 1 Reference Voltage - 25μA Low Quiesc

文件：1.26768 Mbytes 页数：26 Pages

DIODES

美台半导体

丝印：SP；Package：SO-8EP；3.8V TO 40V INPUT, 5A LOW IQ SYNCHRONOUS BUCK WITH PROGRAMMABLE FREQUENCY

Features - VIN 3.8V to 40V - 5A Continuous Output Current - 0.8V ± 1 Reference Voltage - 25μA Low Quiescent Current (Pulse Frequency Modulation) - Programmable Switching Frequency: 100kHz to 2.2MHz - External Clock Synchronization: 100kHz to 2.2MHz - Up to 85 Efficiency at 5mA Light Load -

文件：1.19925 Mbytes 页数：26 Pages

DIODES

美台半导体

丝印：SP；Package：SO-8EP；AUTOMOTIVE-COMPLIANT, 40V, 5A SYNCHRONOUS BUCK WITH PROGRAMMABLE SOFT-START TIME

Features - AEC-Q100 Qualified with the Following Results - Device Temperature Grade 1: -40°C to +125°C TA Range - Device HBM ESD Classification Level H2 - Device CDM ESD Classification Level C5 - VIN: 3.8V to 40V - 5A Continuous Output Current - 0.8V ± 1 Reference Voltage - 25μA Low Quiesc

文件：1.34143 Mbytes 页数：26 Pages

DIODES

美台半导体

丝印：SP；Package：SO-8EP；AUTOMOTIVE-COMPLIANT, 40V, 5A SYNCHRONOUS BUCK WITH INTERNAL COMPENSATION

Features - AEC-Q100 Qualified with the Following Results - Device Temperature Grade 1: -40°C to +125°C TA Range - Device HBM ESD Classification Level H2 - Device CDM ESD Classification Level C5 - VIN: 3.8V to 40V - 5A Continuous Output Current - 0.8V ± 1 Reference Voltage - 25μA Low Quiesc

文件：1.19245 Mbytes 页数：21 Pages

DIODES

美台半导体

丝印：SP；Package：SO-8EP；3.8V TO 40V INPUT, 5A LOW IQ SYNCHRONOUS BUCK WITH INTERNAL COMPENSATION

Features - VIN: 3.8V to 40V - Output Voltage (VOUT): 0.8V to VIN - 5A Continuous Output Current - 0.8V ± 1 Reference Voltage - 25μA Low Quiescent Current (Pulse Frequency Modulation) - Adjustable Switching Frequency: 100kHz to 2.2MHz - External Clock Synchronization: 100kHz to 2.2MHz - Adj

文件：1.19409 Mbytes 页数：21 Pages

DIODES

美台半导体

丝印：SP；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

文件：139.12 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体