首页 >SM7341EHKP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GenerationVTechnology TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboard | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
HEXFET짰PowerMOSFET Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
GenerationVTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea17 | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SINOPOWER/大中 |
24+ |
DFN5X6G-8EP2 |
786000 |
全新原装假一罚十 |
询价 | ||
NXP/恩智浦 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
SINOPOWER/大中 |
23+ |
DFN5X6G-8 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
SINOPOW |
24+ |
DFN |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
大中 |
16+PBF |
QFN8 |
100000 |
现货 |
询价 | ||
SINOPOW |
2447 |
DFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
大中 |
16+ |
DFN5x6 |
20000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
大中 |
21+ |
QFN8 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
SINOPOWER/大中 |
20+ |
DFN5X6G-8EP2 |
120000 |
只做原装 可免费提供样品 |
询价 | ||
Sinopow |
23+ |
DFN5x6B |
8560 |
受权代理!全新原装现货特价热卖! |
询价 |
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