SINGLE 12/10/8-BIT VOLTAGE-OUTPUT DACS

文件：167.59 Kbytes 页数：9 Pages

ICMIC

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：134.99 Kbytes 页数：7 Pages

IRF

Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

文件：379.66 Kbytes 页数：7 Pages

UMW

友台半导体

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

文件：340.07 Kbytes 页数：7 Pages

EVVOSEMI

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