首页 >SM4603CSK-TRG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TO-3POWERTRANSISTORSOCKET | KEYSTONE Keystone Electronics Corp. | KEYSTONE | ||
7A竊?0VN-CHANNELMOSFET | KIAKIA Semiconductor Technology 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO4603usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardproductAO4603isPb-free(meetsROHS&Sony | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO4603usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardproductAO4603isPb-free(meetsROHS&Sony | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAON4603usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAON4603isPb-free(meetsROHS&Sony259specifications). | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
QL(AZ4)MicroLimitSwitch FEATURES 1.Subminiaturedesign Thesizeoftheactualunitisapproximately 1/10inthecaseoftheplunger modelandapproximately1/6.5inthe caseofthearmmodel,thatofthevertical typelimitswitch. Large-scaleminiaturizationhasbeen achieved.Idealforminiaturizedmachinery | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
SiliconLimiterDiodesandCeramicHermeticPackagedDevices Features Establishedlimiterdiodeprocess Highpower,mid-range,andcleanupdesigns Lowinsertionloss:0.1dB@10GHz Peakpowerhandlingto+74dBm Ultralowspikeleakagepower TightcontrolofIlayerbasewidth | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | SKYWORKS | ||
LowVFandHighPowerDiode Description TheCTNS-4603Sisa300V,60A,fastrecoverydiode.ThemaximumVFof1.2Vandthemaximumtrrof100ns(IF:IRP=1:1)arerealizedbyoptimizingthetrade-offrelationshipbetweenVFandtrr.Thelowthermalresistancepackageachieveshighperformanceintermsofheatdissip | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
FastRecoveryandHighPowerDiode Features TheCTXS-4603Sisahighpowerandfastrecoverydiodewhichrealizeapeakreversevoltageof300V,atypicalforwardvoltagedropof1.05V(typ.)andtypicaltrr-timeof32ns(typ.)optimizingalife-timecontrol.Itsupportshigh-speedswitchingandreducesforward-loss. Thelowt | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
LightTouchSwitches/EVQP4/P8 | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic |
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