| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SIR662DP-T1-GE3>芯片详情
SIR662DP-T1-GE3_VISHAY/威世_MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET华康联电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SIR662DP-T1-GE3
- 功能描述:
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SIR662DP
- SIR662DP-TI-GE3
- SIR646DP-T1-GE3
- SIR664DP
- SIR646DPT1GE3
- SIR664DP-T1-E3
- SIR646DP-T1-E3
- SIR664DPT1GE3
- SIR664DP-T1-GE3
- SIR644DP-T1-GE3
- SIR664DP-T1-RE3
- SIR644DPT1GE3
- SIR668ADP-T1-GE3
- SIR644DP-T1-E3
- SIR668ADP-T1-RE3
- SIR644DP
- SIR668ADP-T1-RE3-H
- SIR668DP-T1-E3
- SIR642DP-T1-GE3
- SIR668DP-T1-GE3
- SIR642DPT1GE3
- SIR668DPT1RE3
- SIR642DP-T1-E3
- SIR668DP-T1-RE3
- SIR642DP
- SIR670DP-T1-E3
- SIR670DPT1GE3
- SIR640DP-T1-GE3IC
- SIR670DP-T1-GE3
- SIR640DP-T1-GE3
- SIR67-21/TR8
- SIR640DPT1GE3
- SIR67-21C
- SIR640DP-T1-E3
- SIR67-21C/B/TR8
- SIR640DP
- SIR67-21C/L28
- SIR640ADR-T1-GE3
- SIR67-21C/L50
- SIR67-21C/L9/TR10
- SIR67-21C/L9/TR8
- SIR640ADP-T1-GE3
- SIR67-21C/TR8
- SIR640ADPT1GE3
- SIR640ADP-T1-E3
- SIR67-21C-TR8
- SIR640ADP
- SIR672DP-T1-E3
- SIR638DP-T1-RE3
- SIR672DP-T1-GE3



