| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SIR642DP-T1-GE3>芯片详情
SIR642DP-T1-GE3_VISHAY/威世_MOSFET 40V 60A 83W 2.4mohms @ 10V诺美思科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SIR642DP-T1-GE3
- 功能描述:
MOSFET 40V 60A 83W 2.4mohms @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
相近型号
- SIR640DPT1GE3
- SIR640DP-T1-E3
- SIR646DP-T1-E3
- SIR640DP
- SIR646DPT1GE3
- SIR640ADR-T1-GE3
- SIR646DP-T1-GE3
- SIR662DP
- SIR662DP0T10GE3
- SIR640ADP-T1-GE3
- SIR662DPFET
- SIR640ADPT1GE3
- SIR662DPFETIGBTIC
- SIR640ADP-T1-E3
- SIR640ADP
- SIR638DP-T1-RE3
- SIR662DP-T1-E3
- SIR662DPT1GE3
- SIR638DP-T1-GE3
- SIR662DP-T1-GE3
- SIR638DPT1GE3
- SIR662DP-T1-GE3IC
- SIR638DP-T1-E3
- SIR662DP-T1-GE3-JSM
- SIR638DP
- SIR638ADP-T1-RE3
- SIR638ADP-T1-GE3
- SIR638ADP-T1-E3
- SIR638ADP-R1-RE3
- SIR662DP-T1-GE3-VB
- SIR638ADP
- SIR662DP-T1-RE3
- SIR632DP-T1-RE3VISH
- SIR662DP-TI-GE3
- SIR632DP-T1-RE3-H
- SIR664DP
- SIR632DP-T1-RE3
- SIR664DP-T1-E3
- SIR632DPT1RE3
- SIR664DPT1GE3
- SIR632DP-T1-GE3
- SIR664DP-T1-GE3
- SIR632DP-T1-E3
- SIR626LDP-T1-RE3
- SIR664DP-T1-RE3
- SIR626LDP-T1-GE3
- SIR668ADP-T1-GE3
- SIR626DP-T1-RE3
- SIR668ADP-T1-RE3
- SIR626DPT1RE3



