E Series Power MOSFET

FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of complianc

文件：196.97 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

4th generation E series technology\n Low figure-of-merit (FOM) Ron x Qg\n Low effective capacitance (Co(er))\n\n ;

Vishay

威世

E Series Power MOSFET

文件：155.76 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

文件：1.94604 Mbytes 页数：16 Pages

INFINEON

英飞凌

N-Channel Enhancement Mode MOSFET

文件：795.34 Kbytes 页数：4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件：234.1 Kbytes 页数：3 Pages

DACO

罡境电子