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首页>SIHG20N50C-E3>芯片详情
SIHG20N50C-E3_VISHAY/威世_MOSFET 560V 20A 292W 270mohm @ 10V旭升微芯
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产品属性
- 类型描述 
- 型号:SIHG20N50C-E3 
- 功能描述:MOSFET 560V 20A 292W 270mohm @ 10V 
- RoHS:否 
- 制造商:STMicroelectronics 
- 晶体管极性:N-Channel 
- 汲极/源极击穿电压:650 V 
- 闸/源击穿电压:25 V 
- 漏极连续电流:130 A 电阻汲极/源极 
- RDS(导通):0.014 Ohms 
- 配置:Single 
- 安装风格:Through Hole 
- 封装/箱体:Max247 
- 封装:Tube 
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