Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.89496 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from

文件：1.29533 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件：444.82 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.91641 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.91641 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.89496 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.91641 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

Vishay

威世