Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

文件：1.82938 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.78938 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definiti

文件：86.98 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definit

文件：130.87 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and

文件：72.58 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司