Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techni

文件：1.3922 Mbytes 页数：8 Pages

VishayVishay Siliconix

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Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power

文件：357.61 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世

Power MOSFET

文件：360.03 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dv/dt rating;

Vishay

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techni

文件：1.3922 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techni

文件：1.3922 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

文件：357.61 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世