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SIHB22N60S

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHB22N60S

S Series Power MOSFET

VishayVishay Siliconix

威世科技

SIHB22N60S-E3

S Series Power MOSFET

VishayVishay Siliconix

威世科技

22N60

HEXFETPOWERMOSFET

DESCRIPTION AstheSMPSMOSFET,theUTC22N60usesUTC’sadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=0.35Ω *UltraLowGateCharge

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

22N60

22A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

ET-22N60

N-ChannelMOSFET

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

FCA22N60N

N-ChannelMOSFET600V,22A,0.165W

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCA22N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=165mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCH22N60N

UltraLowGateCharge(Typ.Qg=45nC),LowEffectiveOutputCapacitance(Typ.Coss.eff=196.4pF)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP22N60N

N-ChannelMOSFET600V,22A,0.165W

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP22N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF22N60NT

N-ChannelMOSFET600V,22A,0.165W

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

ICE22N60

N-ChannelEnhancementModeMOSFET

MICROSS

MICROSS

ICE22N60

N-ChannelEnhancementModeMOSFET

ICEMOSIcemos Technology

Icemos 技术

ICE22N60W

N-ChannelEnhancementModeMOSFET

ICEMOSIcemos Technology

Icemos 技术

ICE22N60W

N-ChannelEnhancementModeMOSFET

MICROSS

MICROSS

IRF22N60

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRFP22N60K

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技

IRFP22N60K

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.28Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP22N60K

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    SIHB22N60S

  • 制造商:

    Vishay Semiconductors

供应商型号品牌批号封装库存备注价格
23+
N/A
85800
正品授权货源可靠
询价
VISHAY
1746+
TO263
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
VISHAY/威世
21+
TO-263
50000
终端可免费提供样品,欢迎咨询
询价
V
23+
T0-263
10000
公司只做原装正品
询价
VISHAY/威世
23+
TO-263
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
2022
TO-263
80000
原装现货,OEM渠道,欢迎咨询
询价
-
22+
T0-263
6000
十年配单,只做原装
询价
isc
2024
D2PAK/TO-263
3000
国产品牌isc,可替代原装
询价
VISHAY/威世
23+
NA/
3262
原厂直销,现货供应,账期支持!
询价
V
22+
T0-263
25000
只做原装进口现货,专注配单
询价
更多SIHB22N60S供应商 更新时间2024-5-25 10:37:00