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SKW20N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicatio

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKW20N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKW20N60HS

HighSpeedIGBTinNPT-technology

HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKW20N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA20N60CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA20N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA20N60CFD

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI20N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge •Pb-freeleadplating;

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI20N60CFD

iscN-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.22Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP20N60CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.22Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP20N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP20N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP20N60CFD

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge •Pb-freeleadplating;

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPW20N60CFD

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPW20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPW20N60CFD

iscN-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤220mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SSF20N60H

Highdv/dtandavalanchecapabilities

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微电子新硅能微电子(苏州)有限公司

SSF20N60H

600VN-ChannelMOSFET

Good-Ark

GOOD-ARK Electronics

SW20N60

N-channelPowerMOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

供应商型号品牌批号封装库存备注价格
SI
2203+
TO-220F
14637
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
SI
24+
TO-220F
14637
询价
SI
589220
16余年资质 绝对原盒原盘 更多数量
询价
SI
2023+
TO-220F
700000
柒号芯城跟原厂的距离只有0.07公分
询价
SI
24+
TO-220F
18000
假一赔百原装正品价格优势实单可谈
询价
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
询价
MINI
08+
25
询价
MINI
2018+
SMD
1680
MINI专营品牌进口原装现货假一赔十
询价
Mini-circuits
18+
原厂原装
6000
专注Mini射频微波全系列,只做原装正品,现货库存
询价
Mini-Circuits
638
原装正品
询价
更多SIF20N60Z供应商 更新时间2024-9-21 13:30:00